Growth and characterization of liquid-phase epitaxial Hg1-xCdxTe films

被引：0

作者：

Huang, GS ^{[1
]}

Chen, XQ ^{[1
]}

Yang, JR ^{[1
]}

He, L ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Epitaxy Res Ctr Adv Mat & Devices, Shanghai 200083, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2000年 / 19卷 / 02期

关键词：

LPE; HpCdTe; composition; electrical parameter;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The liquid-phase epitaxy growth of Hg1-xCdxTe films from Te-rich solution on (111)B CdZnTe substrate in slide boat was reported. Microscope and IR transmittance spectra and Hall measurements were carried out to characterize the quality of epilayers. Hg1-xCdxTe epilayers in 1 similar to 3 mu m, 3 similar to 5 mu m, 8 similar to 14 mu m ranges were grown with flat surface, low density of dislocation and uniform composition. Good growth reproducibility of material parameters was obtained. Under an appropriate thermal annealing condition, some good results on electrical properties of p-type and n-type Hg1-x CdxTe were achieved, and they could be reproduced well.

引用

页码：145 / 148

页数：4

共 4 条

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