GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE DISTRIBUTED-FEEDBACK DIODE LASERS

被引：82

作者：

NAKAMURA, M

AIKI, K

UMEDA, J

YARIV, A

YEN, HW

MORIKAWA, T

机构：

[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN

[2] CALTECH, PASADENA, CA 91109 USA

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 09期

关键词：

D O I：

10.1063/1.1655559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：487 / 488

页数：2

共 50 条

[31] DISTRIBUTED FEEDBACK PB1-XSNX TE DOUBLE-HETEROSTRUCTURE LASERS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (11) : 1248 - 1249
[32] ELECTRONIC-STRUCTURES OF GAAS-GA1-XALXAS REPEATED MONOLAYER HETEROSTRUCTURE
CARUTHERS, E
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[34] IMPROVEMENT OF GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASER WAFER BY GA1-XALXAS BUFFER LAYER
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[J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 503 - 505
[35] DEEP LEVEL LUMINESCENCE OF GAAS-GA1-XALXAS DOUBLE HETEROJUNCTION LASER
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[36] GRADUAL DEGRADATION OF GAAS DOUBLE-HETEROSTRUCTURE LASERS
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RITCHIE, S
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 300 - 305
[37] IMPROVED LPE GROWTH METHOD FOR GAAS-GA1-XALXAS DOUBLE HETEROSTRUCTURES
NISHITANI, Y
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[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 35 (03) : 279 - 284
[38] EFFECTS OF FACET COATINGS ON DEGRADATION CHARACTERISTICS OF GAAS-GA1-XALXAS DH LASERS
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ITO, R
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 625 - 627
[39] DEPENDENCE OF THRESHOLD AND ELECTRON LIFETIME ON ACCEPTOR CONCENTRATION IN GAAS-GA1-XALXAS LASERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3240 - 3244
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