INFLUENCE OF QUENCHING ON ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON

被引：0
|
作者：
RYSSEL, H [1 ]
KRANZ, H [1 ]
机构：
[1] FRAUNHOFER GESELL,INST FESTKORPER TECHNOL,MUNICH,FED REP GER
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 28卷 / 01期
关键词：
D O I：
10.1002/pssa.2210280152
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：K25 / K27
页数：3
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