INFLUENCE OF DEFICIENCIES ON DIFFUSION OF ARSENIC IMPLANTED IN SILICON

被引：0

作者：

BRELOT, A ^{[1
]}

LAGORSSE, JM ^{[1
]}

DUMETZ, M ^{[1
]}

ASSEMAT, JL ^{[1
]}

机构：

[1] ECOLE NORMALE SUPERIEUR PARIS,GRP PHYS SOLIDES,PARIS,FRANCE

来源：

VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1974年 / 29卷 / 173期

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：371 / 373

页数：3

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