INFLUENCE OF DEFICIENCIES ON DIFFUSION OF ARSENIC IMPLANTED IN SILICON

被引：0
|
作者：
BRELOT, A [1 ]
LAGORSSE, JM [1 ]
DUMETZ, M [1 ]
ASSEMAT, JL [1 ]
机构：
[1] ECOLE NORMALE SUPERIEUR PARIS,GRP PHYS SOLIDES,PARIS,FRANCE
来源：
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1974年 / 29卷 / 173期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：371 / 373
页数：3
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