ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON

被引：2
|
作者：
RYSSEL, H [1 ]
KRANZ, H [1 ]
机构：
[1] FRAUNHOFER GESELL,INST FESTKORPER TECHNOL,PAUL GERHARDT ALLEE 42,D-8000 MUNICH,FED REP GER
来源：
APPLIED PHYSICS | 1975年 / 7卷 / 01期
关键词：
D O I：
10.1007/BF00900513
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：11 / 14
页数：4
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