STUDY OF DIAMOND NUCLEATION ON POROUS SILICON

被引：0
|
作者：
BAI, YZ
WANG, CL
JIN, ZS
LU, XY
ZOU, GT
机构：
来源：
CHINESE PHYSICS LETTERS | 1995年 / 12卷 / 07期
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暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Diamond films have been deposited on porous silicon with microwave plasma chemical vapour deposition method. Nucleation density and site have been observed and analysed by using scanning electron micrography. Experimental results showed that the nucleation density changes with the porosity and the nucleation occurs mostly on the edge of the pores. Reasons of these phenomena are discussed.
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页码：435 / 437
页数：3
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