Enhancement of Diamond Nucleation by Atomic Silicon Microaddition

被引：4

作者：

Isshiki, Hideo ^{[1
]}

Yoshida, Mikio ^{[1
]}

Tobita, Ryutaro ^{[1
]}

Shigeeda, Tetsuya ^{[1
]}

Kinoshita, Motoi ^{[1
]}

Matsushima, Kenshiro ^{[1
]}

Tamura, Takashi ^{[1
]}

机构：

[1] Univ Electrocommun, Dept Engn Sci, Chofu, Tokyo 1828585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 09期

关键词：

CHEMICAL-VAPOR-DEPOSITION; RAMAN-SCATTERING; AMORPHOUS-CARBON; FILMS; SURFACE; SPECTROSCOPY; SPECTRA; PLASMA; GROWTH; FIELD;

D O I：

10.1143/JJAP.51.090108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The enhancement of diamond nucleation by atomic silicon microaddition is demonstrated. From the observation by surface-enhanced Raman scattering (SERS), the mechanism of bias-enhanced nucleation (BEN) with atomic silicon microaddition is discussed. We propose two nucleation processes, namely, i) generation in condensed amorphous carbon (a-C) and ii) carbon cohesion with the adsorbed silicon atom as the core. It is shown that the nucleation process ii) induces highly oriented diamond growth on Si substrates. (C) 2012 The Japan Society of Applied Physics

引用

页数：6

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