INTERACTION OF DISLOCATIONS WITH IMPURITIES IN SILICON-CRYSTALS STUDIED BY INSITU X-RAY TOPOGRAPHY

被引：0
|
作者：
SUMINO, K
IMAI, M
机构：
来源：
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1983年 / 47卷 / 05期
关键词：
D O I：
10.1080/13642818308246473
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：753 / 766
页数：14
相关论文
共 50 条
  • [1] LIVE X-RAY TOPOGRAPHY AND ITS APPLICATION TO THE STUDY OF DISLOCATIONS IN SILICON-CRYSTALS
    CHIKAWA, J
    [J]. JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1983, 8 : 13 - 22
  • [2] INSITU X-RAY TOPOGRAPHIC STUDIES OF THE GENERATION AND THE MULTIPLICATION PROCESSES OF DISLOCATIONS IN SILICON-CRYSTALS AT ELEVATED-TEMPERATURES
    SUMINO, K
    HARADA, H
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (06): : 1319 - 1334
  • [3] INSITU X-RAY-OBSERVATION OF DISLOCATIONS IN SILICON-CRYSTALS NEAR THE MELTING-POINT
    CHIKAWA, J
    [J]. JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1984, 13 : 55 - 73
  • [4] PECULIARITIES OF X-RAY LAUE DIFFRACTION IN THIN SILICON-CRYSTALS CONTAINING PURE AND DECORATED DISLOCATIONS
    DATSENKO, LI
    KHRUPA, VI
    SKOROKHOD, MY
    NIKOLAEV, VV
    [J]. UKRAINSKII FIZICHESKII ZHURNAL, 1987, 32 (01): : 97 - 102
  • [5] WATER COOLED SILICON-CRYSTALS FOR X-RAY MONOCHROMATORS
    WAHL, R
    SHAH, R
    JACKSON, K
    TONNESSEN, T
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 318 (1-3): : 908 - 913
  • [6] Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals
    Vetter, WM
    Dudley, M
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 87 (02): : 173 - 177
  • [7] USE OF ASYMMETRIC EXPOSURES IN PLANAR WAVE X-RAY TOPOGRAPHY FOR THE STUDY OF MICRODEFECTS IN SILICON-CRYSTALS
    VOLOSHIN, AE
    SMOLSKII, IL
    ROZHANSKII, VN
    [J]. ZHURNAL TEKHNICHESKOI FIZIKI, 1992, 62 (04): : 171 - 175
  • [8] DISLOCATIONS IN SILICON-CRYSTALS
    SUMINO, K
    [J]. JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1983, 8 : 23 - 44
  • [9] X-RAY PLANE-WAVE TOPOGRAPHY OF ANNEALED SILICON-CRYSTALS USING ASYMMETRIC REFLECTIONS
    ABDALI, S
    ZIELINSKAROHOZINSKA, E
    GERWARD, L
    NIELSEN, L
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 138 (01): : 67 - 74
  • [10] EXAMINATION OF SURFACE-ROUGHNESS OF SILICON-CRYSTALS BY DOUBLE-CRYSTAL X-RAY TOPOGRAPHY
    NIWANO, M
    KOBAYASHI, T
    MIYAMOTO, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (06): : 1113 - 1114
12345