PREVENTION OF CMOS LATCH-UP BY GOLD DOPING

被引：25
|
作者：
DAWES, WR [1 ]
DERBENWICK, GF [1 ]
机构：
[1] SANDIA LABS,ALBUQUERQUE,NM 87115
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 06期
关键词：
D O I：
10.1109/TNS.1976.4328618
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2027 / 2030
页数：4
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