EPITAXIAL GROWTH OF SILICON CARBIDE

被引：3
|
作者：
BRANDER, RW
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 07期
关键词：
D O I：
10.1149/1.2426276
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：881 / 883
页数：3
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