HOT-ELECTRON TEMPERATURE IN INAS MEASURED BY TUNNELING

被引:33
|
作者
ROWELL, JM [1 ]
TSUI, DC [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1976年 / 14卷 / 06期
关键词
D O I
10.1103/PhysRevB.14.2456
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2456 / 2463
页数:8
相关论文
共 50 条
  • [31] SUPERLATTICE BAND-STRUCTURE PROBED BY TUNNELING HOT-ELECTRON INJECTION
    KUAN, CH
    TSUI, DC
    CHOI, KK
    APPLIED PHYSICS LETTERS, 1992, 61 (04) : 456 - 458
  • [32] A NEW FUNCTIONAL, RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR (RHET)
    YOKOYAMA, N
    IMAMURA, K
    MUTO, S
    HIYAMIZU, S
    NISHI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11): : L853 - L853
  • [33] Ultrahigh gain hot-electron tunneling transistor approaching the collection limit
    Jun LIN
    Pengfei LUO
    Xinpei DUAN
    Wujun ZHANG
    Chao MA
    Tong BU
    Wanhan SU
    Bei JIANG
    Guoli LI
    Xuming ZOU
    Ting YU
    Lei LIAO
    Xingqiang LIU
    ScienceChina(InformationSciences), 2023, 66 (06) : 307 - 308
  • [34] A BISTABLE MULTIVIBRATOR USING A RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR
    YOKOYAMA, N
    IMAMURA, K
    OHNISHI, H
    MUTO, S
    MORI, T
    SHIBATOMI, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1865 - 1865
  • [35] Probing hot-electron dynamics at surfaces with a cold scanning tunneling microscope
    Bürgi, L
    Jeandupeux, O
    Brune, H
    Kern, K
    PHYSICAL REVIEW LETTERS, 1999, 82 (22) : 4516 - 4519
  • [36] Ultrahigh gain hot-electron tunneling transistor approaching the collection limit
    Lin, Jun
    Luo, Pengfei
    Duan, Xinpei
    Zhang, Wujun
    Ma, Chao
    Bu, Tong
    Su, Wanhan
    Jiang, Bei
    Li, Guoli
    Zou, Xuming
    Yu, Ting
    Liao, Lei
    Liu, Xingqiang
    SCIENCE CHINA-INFORMATION SCIENCES, 2023, 66 (06)
  • [37] HOT-ELECTRON DISTRIBUTION IN THE QUANTUM-WELL OF A RESONANT TUNNELING DIODE
    HU, YM
    STAPLETON, S
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 (45) : 8991 - 8996
  • [38] Hot-electron scattering at Au/Si(100) Schottky interfaces measured by temperature dependent ballistic electron emission microscopy
    Ventrice, CA
    LaBella, VP
    Ramaswamy, G
    Yu, HP
    Schowalter, LJ
    APPLIED SURFACE SCIENCE, 1996, 104 : 274 - 281
  • [39] IMPACT IONIZATION IN THE BASE OF A HOT-ELECTRON ALSB/INAS BIPOLAR-TRANSISTOR
    VENGURLEKAR, AS
    CAPASSO, F
    CHIU, TH
    APPLIED PHYSICS LETTERS, 1990, 57 (17) : 1772 - 1774