Ultrahigh gain hot-electron tunneling transistor approaching the collection limit

被引：0

作者：

Jun LIN ^{[1
,2
]}

Pengfei LUO ^{[2
]}

Xinpei DUAN ^{[2
]}

Wujun ZHANG ^{[2
]}

Chao MA ^{[2
]}

Tong BU ^{[2
]}

Wanhan SU ^{[2
]}

Bei JIANG ^{[1
]}

Guoli LI ^{[2
]}

Xuming ZOU ^{[2
]}

Ting YU ^{[3
]}

Lei LIAO ^{[2
]}

Xingqiang LIU ^{[2
]}

机构：

[1] Faculty of Physics and Electronic Science,Hubei University

[2] State Key Laboratory for Chemo/Biosensing and Chemometrics,College of Semiconductors (College of Integrated Circuits),Hunan University

[3] School of Physics and Technology,Wuhan University

来源：

ScienceChina(InformationSciences) | 2023年 / 66卷 / 06期

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

A hot-electron transistor(HET) is a unipolar and majority carrier device with voltage-controlled transport of ballistic hot electrons,and the monochromatic high-energy hot electrons are afforded by the tunnel and filter oxide barriers.The injected hot electrons from the emitter transit through the tunnel barrier with a width below the carrier mean free path(MFP) into the base region and then cross the filter barrier and are finally collected by the collector.

引用

页码：307 / 308

页数：2

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