A low-power 20 GSps track-and-hold amplifier in 0.18 mu m SiGe BiCMOS technology

被引:0
|
作者
Tang Kai [1 ,2 ]
Meng Qiao [1 ,2 ]
Wang Zhigong [1 ,2 ]
Zhang Yi [1 ,2 ]
Yin Kuai [1 ,2 ]
Guo Ting [1 ,2 ]
机构
[1] Southeast Univ, Inst RF & OE ICs, Nanjing 210096, Jiangsu, Peoples R China
[2] Minist Educ, Engn Res Ctr RF ICs & RF Syst, Nanjing 210096, Jiangsu, Peoples R China
关键词
track-and-hold amplifier (THA); ADC; ultra-high-speed; SiGe BiCMOS; low power;
D O I
10.1088/1674-4926/34/9/095002
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
An open-loop 20 GSps track-and-hold amplifier (THA) using fully-differential architecture to mitigate common-mode noise and suppress even-order harmonics is presented. CMOS switch and dummy switches are adopted to achieve high speed and good linearity. A cross-coupled pair is used in the input buffer to suppress the charge injection and clock feedthrough. Both the input and output buffers use an active inductor load to achieve high signal bandwidth. The THA is realized with 0.18 mu m SiGe BiCMOS technology using only CMOS devices at a 1.8 V voltage supply and with a core area of 0.024 mm(2). The measurement results show that the SFDR is 32.4 dB with a 4 GHz sine wave input at a 20 GSps sampling rate, and the third harmonic distortion is 48 dBc. The effective resolution bandwidth of the THA is 12 GHz and the figure of merit is only 0.028 mW/GHz.
引用
收藏
页数:5
相关论文
共 50 条
  • [1] A low-power 20 GSps track-and-hold amplifier in 0.18 μm SiGe BiCMOS technology
    唐凯
    孟桥
    王志功
    张翼
    尹快
    郭婷
    [J]. Journal of Semiconductors., 2013, 34 (09) - 108
  • [2] A low-power 20 GSps track-and-hold amplifier in 0.18 μm SiGe BiCMOS technology
    唐凯
    孟桥
    王志功
    张翼
    尹快
    郭婷
    [J]. Journal of Semiconductors, 2013, (09) : 104 - 108
  • [3] A 2Gsample/s 8b track-and-hold Amplifier in 0.18μm sige BiCMOS technology
    Zhang, Yi
    Meng, Qiao
    Zhang, Li
    Li, Wei
    [J]. ICIC Express Letters, 2013, 7 (09): : 2663 - 2668
  • [4] 1 GSps 11-bit track-and-hold in SiGe BiCMOS
    Robinson, Dirk J.
    Larue, George S.
    [J]. IEEE Workshop on Microelec. Electron Dev., 2005, (67-70):
  • [5] A low-power, 10Gs/s track-and-hold amplifier in SiGeBiCMOS technology
    Borokhovych, Y
    Gustat, H
    Tillack, B
    Heinemann, B
    Lu, Y
    Kuo, WML
    Li, XT
    Krithivasan, R
    Cressler, JD
    [J]. ESSCIRC 2005: PROCEEDINGS OF THE 31ST EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2005, : 263 - 266
  • [6] A fully monolithic 0.18 mu m SiGe BiCMOS power amplifier design
    Chen Lei
    Ruan Ying
    Su Jie
    Zhang Shulin
    Shi Chunqi
    Lai Zongsheng
    [J]. JOURNAL OF SEMICONDUCTORS, 2011, 32 (05)
  • [7] A Track-and-Hold Amplifier for 1GSps 8bit ADC in 0.18 μm CMOS Process
    Zhang, Yi
    Meng, Qiao
    Huang, Qing
    Tang, Kai
    [J]. 2012 INTERNATIONAL CONFERENCE ON ADVANCED TECHNOLOGIES FOR COMMUNICATIONS (ATC 2012), 2012, : 5 - 8
  • [8] A Low Droop Rate Wide Input Bandwidth High Dynamic Range Track-and-hold Amplifier in 0.18 μm SiGe Process
    Huang, Guan-Lin
    Li, Cheng-Rui
    Yang, Han-Sen
    Chang, Hong-Yeh
    [J]. 2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC), 2018, : 1510 - 1512
  • [9] A Fully Integrated 0.18 μm SiGe BiCMOS Power Amplifier
    Liu, Guojun
    [J]. PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2015,
  • [10] A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 mu m CMOS Technology
    Chen, Jun-Da
    [J]. ACTIVE AND PASSIVE ELECTRONIC COMPONENTS, 2013, 2013