A low-power, 10Gs/s track-and-hold amplifier in SiGeBiCMOS technology

被引：16

作者：

Borokhovych, Y ^{[1
]}

Gustat, H ^{[1
]}

Tillack, B ^{[1
]}

Heinemann, B ^{[1
]}

Lu, Y ^{[1
]}

Kuo, WML ^{[1
]}

Li, XT ^{[1
]}

Krithivasan, R ^{[1
]}

Cressler, JD ^{[1
]}

机构：

[1] IHP, Circuit Design Dept, D-15236 Frankfurt, Germany

来源：

ESSCIRC 2005: PROCEEDINGS OF THE 31ST EUROPEAN SOLID-STATE CIRCUITS CONFERENCE | 2005年

关键词：

D O I：

10.1109/ESSCIR.2005.1541610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a low-power high-speed BiCMOS track-and-hold amplifier (THA). It combines the differential switched-emitter follower of [1] with the low-droop output buffer presented in [2]. A test implementation consumes 70mW of total power (30 mW THA). It works up to 15 GS/s, using minimum-size HBTs in a 0.25 mu m 200 GHz SiGe BiCMOS technology. At 10 GS/s and an input signal of I GHz, the achieved THD corresponds to 6.8 bits accuracy. To our knowledge, the present circuit is by far the fastest THA with low power consumption and high accuracy.

引用

页码：263 / 266

页数：4

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