A Fully Integrated 0.18 μm SiGe BiCMOS Power Amplifier

A fully integrated class AB power amplifier (PA) for 900MHz front end IC integration is presented. The PA is implemented in a two-stage single-ended structure and is designed in HHGrace 0.18 mu m SiGe BiCMOS process. This PA is designed in fully integrated style without any external on-board matching components, the designed results show that under 3.3V power supply and 28mA quiescent current, the PA can obtain 23.5dBm maximum output power at 900MHz, the output 1 dB compression point is 19.8dBm, the power added efficiency (PAE) at 1dB compression point is 25.7%, peak PAE is 33.7% and the S parameter results are as follows at 900MHz , S11 = -16.1dB , S21 = 27.2dB , S12 = -49.8dB , S22 = -7.0dB. The PA is unconditionally stable. The power amplifier achieved predicted good impedance matching, output power, linearity, gain and power added efficiency with chip size 1.3x1.1 mm(2)(including pads).