STUDY OF BAND-GAP AND BAND LEVELS OF CU-IN-SE-TE THIN-FILMS COMPOUNDS

被引：4
|
作者：
DIAZ, R
LEON, M
机构：
[1] Dpt. Fisica Aplicada CXII, Universidad Autonoma de Madrid
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 01期
关键词：
D O I：
10.1116/1.578702
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The first direct gap of Cu-In-Se-Te thin films grown by triode sputtering has been determined, showing values in the 0.76-1.42 eV range. The spread of values is explained assuming that the Cu/In atomic ratio of sample composition affects significantly the conduction band minimum whereas the valence band maximum is concerned by the Cu/(Se + Te) atomic ratio. In any case, the variation observed in the energy gap is mainly due to changes in the Cu/In atomic ratio.
引用
收藏
页码：199 / 204
页数：6
相关论文
共 50 条
  • [21] Band-Gap Engineering in ZnO Thin Films: A Combined Experimental and Theoretical Study
    Pawar, Vani
    Jha, Pardeep K.
    Panda, S. K.
    Jha, Priyanka A.
    Singh, Prabhakar
    PHYSICAL REVIEW APPLIED, 2018, 9 (05):
  • [22] Band-gap engineering in Cu(In,Ga)Se-2 thin films grown from (In,Ga)(2)Se-3 precursors
    Gabor, AM
    Tuttle, JR
    Bode, MH
    Franz, A
    Tennant, AL
    Contreras, MA
    Noufi, R
    Jensen, DG
    Hermann, AM
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1996, 41-2 : 247 - 260
  • [23] Optical band-gap and activation energy of thin films from the Se-Ag-I and Te-Ag-I systems
    Petkova, T
    Mitkova, M
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1995, 137 (1-4): : 1409 - 1412
  • [24] Optical Band Gap Study of a-Se and Se-Sb Thin Films
    Kaur, Ramandeep
    Singh, Palwinder
    Thakur, Anup
    INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2015), 2016, 1728
  • [25] Study of band-gap characteristics for curved electromagnetic band-gap structures
    Liu, Tao
    Cao, Xiang-Yu
    Yin, Zhao-Wei
    Zhang, Guang
    TENCON 2006 - 2006 IEEE REGION 10 CONFERENCE, VOLS 1-4, 2006, : 1463 - +
  • [26] Optical band gap of Bi2Te2.8Se0.2 thin films
    Soni, PH
    Otia, JR
    Desai, CF
    INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, 2004, 11 (03) : 221 - 223
  • [27] THERMAL WIDTH OF THE BAND-GAP OF THIN TELLURIUM-FILMS
    VIGDOROVICH, VN
    UKHLINOV, GA
    CHIBOTARU, NI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (09): : 1074 - 1077
  • [28] CADMIUM LEVELS IN THE BAND-GAP OF SILICON
    KEMERINK, GJ
    PLEITER, F
    MOHSEN, M
    HYPERFINE INTERACTIONS, 1987, 35 (1-4): : 707 - 710
  • [29] DIVACANCY LEVELS IN THE BAND-GAP OF SILICON
    VASILEV, AV
    SMIRNOV, LS
    SHAIMEEV, SS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (04): : 465 - 467
  • [30] Band-Gap Nonlinearity in Lead Chalcogenide ( PbQ, Q = Te, Se, S) Alloys
    Yamini, Sima Aminorroaya
    Patterson, Vaughan
    Santos, Rafael
    ACS OMEGA, 2017, 2 (07): : 3417 - 3423
12345