STUDY OF BAND-GAP AND BAND LEVELS OF CU-IN-SE-TE THIN-FILMS COMPOUNDS

被引：4
|
作者：
DIAZ, R
LEON, M
机构：
[1] Dpt. Fisica Aplicada CXII, Universidad Autonoma de Madrid
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 01期
关键词：
D O I：
10.1116/1.578702
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The first direct gap of Cu-In-Se-Te thin films grown by triode sputtering has been determined, showing values in the 0.76-1.42 eV range. The spread of values is explained assuming that the Cu/In atomic ratio of sample composition affects significantly the conduction band minimum whereas the valence band maximum is concerned by the Cu/(Se + Te) atomic ratio. In any case, the variation observed in the energy gap is mainly due to changes in the Cu/In atomic ratio.
引用
收藏
页码：199 / 204
页数：6
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