DIVACANCY LEVELS IN THE BAND-GAP OF SILICON

被引：0
|
作者：
VASILEV, AV
SMIRNOV, LS
SHAIMEEV, SS
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1986年 / 20卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：465 / 467
页数：3
相关论文
共 50 条
  • [1] CADMIUM LEVELS IN THE BAND-GAP OF SILICON
    KEMERINK, GJ
    PLEITER, F
    MOHSEN, M
    HYPERFINE INTERACTIONS, 1987, 35 (1-4): : 707 - 710
  • [2] POSITIONS OF ACCEPTOR LEVELS OF A DIVACANCY IN THE BAND-GAP OF N-TYPE SILICON IRRADIATED WITH 6.3 MEV PROTONS
    SHEMAEV, BV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1254 - 1255
  • [3] BAND-GAP OF POROUS SILICON
    KUX, A
    CHORIN, MB
    PHYSICAL REVIEW B, 1995, 51 (24): : 17535 - 17541
  • [4] SECOND INDIRECT BAND-GAP IN SILICON
    FORMAN, RA
    THURBER, WR
    ASPNES, DE
    SOLID STATE COMMUNICATIONS, 1974, 14 (10) : 1007 - 1010
  • [5] MEASUREMENT OF THE BAND-GAP IN SILICON AND GERMANIUM
    SUKHEEJA, BD
    AMERICAN JOURNAL OF PHYSICS, 1983, 51 (01) : 72 - 72
  • [6] SECOND INDIRECT BAND-GAP IN SILICON
    FORMAN, RA
    THURBER, WR
    ASPNES, DE
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 200 - 200
  • [7] ELECTRICAL BAND-GAP OF POROUS SILICON
    CHEN, ZL
    LEE, TY
    BOSMAN, G
    APPLIED PHYSICS LETTERS, 1994, 64 (25) : 3446 - 3448
  • [8] Attosecond band-gap dynamics in silicon
    Schultze, Martin
    Ramasesha, Krupa
    Pemmaraju, C. D.
    Sato, S. A.
    Whitmore, D.
    Gandman, A.
    Prell, James S.
    Borja, L. J.
    Prendergast, D.
    Yabana, K.
    Neumark, Daniel M.
    Leone, Stephen R.
    SCIENCE, 2014, 346 (6215) : 1348 - 1352
  • [9] BAND-GAP DETERMINATION OF THERMAL SILICON DIOXIDE ON SILICON
    ADAMCHUK, VK
    AFANAS'EV, VV
    FIZIKA TVERDOGO TELA, 1984, 26 (08): : 2508 - 2510
  • [10] The As2V complex in silicon:: Band-gap levels, migration and annealing
    Nielsen, H. Kortegaard
    Mesli, A.
    Dobaczewski, L.
    Nielsen, K. Bonde
    Lindberg, C. E.
    Privitera, V.
    Larsen, A. Nylandsted
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 253 (1-2): : 172 - 175
12345