VIBRONIC STATES OF SILICON SILICON DIOXIDE INTERFACE TRAPS

被引：21

|

作者：

ENGSTROM, O

GRIMMEISS, HG

机构：

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1989年 / 4卷 / 12期

关键词：

D O I：

10.1088/0268-1242/4/12/012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1106 / 1115

页数：10

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