SURFACE STATES OF SILICON-SILICON DIOXIDE INTERFACE GROWN BY VAPOR DEPOSITION

被引：5

|

作者：

TARUI, Y

KOMIYA, Y

TESHIMA, H

NAGAI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1966年 / 5卷 / 04期

关键词：

D O I：

10.1143/JJAP.5.275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：275 / &

相关论文

共 50 条

[1] ELECTRONIC STATES AT SILICON-SILICON DIOXIDE INTERFACE
CHENG, YC
[J]. PROGRESS IN SURFACE SCIENCE, 1977, 8 (05) : 182 - 218
[2] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[3] A STUDY OF OXIDE TRAPS AND INTERFACE STATES OF THE SILICON-SILICON DIOXIDE INTERFACE
STIVERS, AR
SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6292 - 6304
[4] INFLUENCE OF PHOSPHOSILICATE GLASS DEPOSITION CONDITIONS ON SURFACE STATE CHARGE AT SILICON-SILICON DIOXIDE INTERFACE
YEOW, YT
CLANCY, JW
LAMB, DR
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1973, 34 (01) : 115 - 119
[5] CITATION CLASSIC - SURFACE-STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
[J]. CURRENT CONTENTS/ENGINEERING TECHNOLOGY & APPLIED SCIENCES, 1982, (07): : 22 - 22
[6] SILICON-SILICON DIOXIDE INTERFACE - AN INFRARED STUDY
BOYD, IW
WILSON, JIB
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3195 - 3200
[7] INTERFACE STATES INDUCED BY THE PRESENCE OF TRAPPED HOLES NEAR THE SILICON-SILICON DIOXIDE INTERFACE
DIMARIA, DJ
BUCHANAN, DA
STATHIS, JH
STAHLBUSH, RE
[J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) : 2032 - 2040
[8] NITROGEN REACTION AT A SILICON-SILICON DIOXIDE INTERFACE
RAIDER, SI
GDULA, RA
PETRAK, JR
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 150 - 152
[9] EFFECT OF ORIENTATION ON SURFACE CHARGE DENSITY AT SILICON-SILICON DIOXIDE INTERFACE
MIURA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (12) : 958 - &
[10] ADMITTANCE STUDIES OF HYDROGEN-INDUCED STATES AT THE SILICON-SILICON DIOXIDE INTERFACE
FARE, TJ
ZEMEL, JN
[J]. SENSORS AND ACTUATORS, 1987, 11 (02): : 101 - 133

← 1 2 3 4 5 →