SURFACE STATES OF SILICON-SILICON DIOXIDE INTERFACE GROWN BY VAPOR DEPOSITION

被引：5

|

作者：

TARUI, Y

KOMIYA, Y

TESHIMA, H

NAGAI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1966年 / 5卷 / 04期

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D O I：

10.1143/JJAP.5.275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：275 / &

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