VIBRONIC STATES OF SILICON SILICON DIOXIDE INTERFACE TRAPS

被引：21
|
作者：
ENGSTROM, O
GRIMMEISS, HG
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1989年 / 4卷 / 12期
关键词：
D O I：
10.1088/0268-1242/4/12/012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1106 / 1115
页数：10
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