ATOMICALLY CONTROLLED GROWTH OF GAAS/NIAL/GAAS STRUCTURES BY MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
HIRONO, S
TANIMOTO, M
INOUE, N
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期
关键词：
D O I：
10.1116/1.587037
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The morphology of molecular-beam epitaxy (MBE) grown GaAs/NiAl/GaAs structures using scanning tunneling microscopy (STM) was investigated. Improving the flatness of the NiAl layer is achieved by improving the wettability of NiAl on GaAs by using a Ni template and increasing the island density by low-temperature growth. This method gives a continuous, flat NiAl film with a mean roughness of one monolayer. A GaAs overlayer with a roughness of two monolayers or less is obtainable by using low-temperature migration enhanced epitaxy (MEE).
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页码：1181 / 1183
页数：3
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