ANISOTROPIC LATERAL GROWTH OF GAAS AND ALAS BY MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
SUGAYA, T
YOKOYAMA, S
KAWABE, M
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1990年 / 106期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：147 / 152
页数：6
相关论文
共 50 条
  • [1] ANISOTROPIC LATERAL GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY
    KAWABE, M
    SUGAYA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (07): : L1077 - L1079
  • [2] OPTICAL STUDIES OF MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS
    ASPNES, DE
    HARBISON, JP
    STUDNA, AA
    FLOREZ, LT
    KELLY, MK
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1127 - 1131
  • [3] MOLECULAR-BEAM EPITAXY OF ALAS/GAAS HETEROSTRUCTURES AND SUPERLATTICES
    ORTON, JW
    [J]. THIN SOLID FILMS, 1988, 163 : 1 - 12
  • [4] APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS
    ASPNES, DE
    HARBISON, JP
    STUDNA, AA
    FLOREZ, LT
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1327 - 1332
  • [5] GROWTH OF COAL/ALAS/GAAS METAL-SEMICONDUCTOR HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY
    TANAKA, M
    SAKAKIBARA, H
    NISHINAGA, T
    IKARASHI, N
    ISHIDA, K
    [J]. SURFACE SCIENCE, 1992, 267 (1-3) : 38 - 42
  • [6] LOW-TEMPERATURE GROWTH OF ALAS/GAAS HETEROSTRUCTURES BY MODULATED MOLECULAR-BEAM EPITAXY
    BRIONES, F
    GONZALEZ, L
    RECIO, M
    VAZQUEZ, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1125 - L1127
  • [7] GROWTH OF GAAS ON SIOX BY MOLECULAR-BEAM EPITAXY
    CHIN, A
    BHATTACHARYA, PK
    KOTHIYAL, GP
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) : 1416 - 1419
  • [8] MODEL OF GAAS GROWTH BY MOLECULAR-BEAM EPITAXY
    HOLLOWAY, S
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1977, 174 (SEP): : 103 - 103
  • [9] SELECTIVE GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY
    SUGAYA, T
    OKADA, Y
    KAWABE, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (6A): : L713 - L716
  • [10] SPIRAL GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY
    HSU, CC
    XU, JB
    WILSON, IH
    ANDERSSON, TG
    THORDSON, JV
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (12) : 1552 - 1554
12345