LOW-TEMPERATURE GROWTH OF ALAS/GAAS HETEROSTRUCTURES BY MODULATED MOLECULAR-BEAM EPITAXY

被引：35
|
作者：
BRIONES, F
GONZALEZ, L
RECIO, M
VAZQUEZ, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1987年 / 26卷 / 07期
关键词：
D O I：
10.1143/JJAP.26.L1125
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L1125 / L1127
页数：3
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