OPTICAL STUDIES OF MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS

被引：60
|
作者：
ASPNES, DE
HARBISON, JP
STUDNA, AA
FLOREZ, LT
KELLY, MK
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期
关键词：
D O I：
10.1116/1.584264
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1127 / 1131
页数：5
相关论文
共 50 条
  • [1] ANISOTROPIC LATERAL GROWTH OF GAAS AND ALAS BY MOLECULAR-BEAM EPITAXY
    SUGAYA, T
    YOKOYAMA, S
    KAWABE, M
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 147 - 152
  • [2] OPTICAL SPECTROSCOPY OF (001) GAAS AND ALAS UNDER MOLECULAR-BEAM EPITAXY GROWTH-CONDITIONS
    WASSERMEIER, M
    KAMIYA, I
    ASPNES, DE
    FLOREZ, LT
    HARBISON, JP
    PETROFF, PM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 2263 - 2267
  • [3] MOLECULAR-BEAM EPITAXY OF ALAS/GAAS HETEROSTRUCTURES AND SUPERLATTICES
    ORTON, JW
    [J]. THIN SOLID FILMS, 1988, 163 : 1 - 12
  • [4] OPTICAL-PROPERTIES OF (113)GAAS/ALAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY AND ATOMIC LAYER MOLECULAR-BEAM EPITAXY
    BACQUET, G
    HASSEN, F
    LAURET, N
    ARMELLES, G
    DOMINGUEZ, PS
    GONZALEZ, L
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (01) : 339 - 342
  • [5] APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS
    ASPNES, DE
    HARBISON, JP
    STUDNA, AA
    FLOREZ, LT
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1327 - 1332
  • [6] PARAMETRIC STUDIES OF GAAS GROWTH BY METALORGANIC MOLECULAR-BEAM EPITAXY
    VODJDANI, N
    LEMARCHAND, A
    PARADAN, H
    [J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 339 - 349
  • [7] GROWTH OF COAL/ALAS/GAAS METAL-SEMICONDUCTOR HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY
    TANAKA, M
    SAKAKIBARA, H
    NISHINAGA, T
    IKARASHI, N
    ISHIDA, K
    [J]. SURFACE SCIENCE, 1992, 267 (1-3) : 38 - 42
  • [8] LOW-TEMPERATURE GROWTH OF ALAS/GAAS HETEROSTRUCTURES BY MODULATED MOLECULAR-BEAM EPITAXY
    BRIONES, F
    GONZALEZ, L
    RECIO, M
    VAZQUEZ, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1125 - L1127
  • [9] GROWTH OF GAAS ON SIOX BY MOLECULAR-BEAM EPITAXY
    CHIN, A
    BHATTACHARYA, PK
    KOTHIYAL, GP
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) : 1416 - 1419
  • [10] MODEL OF GAAS GROWTH BY MOLECULAR-BEAM EPITAXY
    HOLLOWAY, S
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1977, 174 (SEP): : 103 - 103
12345