PRESSURE-DEPENDENCE AND COMPARISON OF THE SI AND SN RELATED DX CENTERS IN ALXGA1-XAS

被引:0
|
作者
LAVIELLE, D
SALLESE, JM
GOUTIERS, B
DMOWSKI, L
BASMAJI, P
PORTAL, JC
GIBART, P
机构
[1] CNRS, SNCI, F-38042 GRENOBLE, FRANCE
[2] HIGH PRESSURE RES CTR, WARSAW, POLAND
[3] CNRS, LPSES, F-06560 VALBONNE, FRANCE
[4] UNIV SAO PAULO, INST FIS & QUIM SAO CARLOS, BR-13560 SAO CARLOS, SP, BRAZIL
来源
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:315 / 320
页数:6
相关论文
共 50 条
  • [31] TEMPERATURE-DEPENDENCE OF PERSISTENT PHOTOCONDUCTIVITY DUE TO DX CENTERS IN ALXGA1-XAS-SI
    BRUNTHALER, A
    KOHLER, K
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 50 (05): : 515 - 517
  • [32] DX DEEP CENTERS IN ALXGA1-XAS GROWN BY LIQUID-PHASE EPITAXY
    TACHIKAWA, M
    MIZUTA, M
    KUKIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (12): : 1594 - 1597
  • [33] Inverted order of acceptor and donor levels of the Si-related DX center in AlxGa1-xAs
    Ghosh, S
    Kumar, V
    PHYSICAL REVIEW B, 1997, 55 (07): : 4042 - 4045
  • [34] Pressure dependence of the optic phonon energies in AlxGa1-xAs
    Holtz, M
    Seon, M
    Brafman, O
    Manor, R
    Fekete, D
    PHYSICAL REVIEW B, 1996, 54 (12) : 8714 - 8720
  • [35] Metastable states observed by optical absorption of DX centers in AlxGa1-xAs:Te
    Mori, Yuzo
    Yokota, Takashi
    Ohkura, Hiroshi
    Japanese Journal of Applied Physics, Part 2: Letters, 1992, 31 (8 A):
  • [36] ATOMIC MODEL FOR HYDROGEN PASSIVATION OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS
    CHANG, KJ
    CHEONG, BH
    PARK, CH
    SOLID STATE COMMUNICATIONS, 1992, 84 (11) : 1005 - 1009
  • [37] PROPERTIES OF DX CENTERS IN ALXGA1-XAS CO-DOPED WITH BORON AND SILICON
    MOONEY, PM
    TISCHLER, MA
    PARKER, BD
    APPLIED PHYSICS LETTERS, 1991, 59 (22) : 2829 - 2831
  • [38] Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs
    Duenas, S
    Pinacho, R
    Castan, E
    Quintanilla, L
    Pelaez, R
    Barbolla, J
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) : 4338 - 4345
  • [39] TIME ANALYZED TRANSIENT SPECTROSCOPY AND MULTIPLE DX RELATED EMISSION CENTERS IN SILICON DOPED ALXGA1-XAS
    AGARWAL, S
    MOHAPATRA, YN
    SINGH, VA
    SHARAN, R
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (11) : 5725 - 5729
  • [40] THE ORIGIN OF THE DX-CENTER IN ALXGA1-XAS
    YAMAGUCHI, E
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (08): : L643 - L645