共 50 条
- [21] DEEP LEVELS AND DX CENTERS IN ALXGA1-XAS/GAAS .1. COMPOSITION DEPENDENCE STUDY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (01): : 84 - 93
- [23] SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L476 - L478
- [25] THE DX CENTER IN GAAS AND ALXGA1-XAS INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (95): : 307 - 314
- [26] TRANSIENT CAPACITANCE STUDIES OF THE PRESSURE-DEPENDENCE OF DEFECT ENERGY-LEVELS IN ALXGA1-XAS INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 493 - 500
- [27] THE DX CENTER IN GAAS AND ALXGA1-XAS SHALLOW IMPURITIES IN SEMICONDUCTORS 1988, 1989, 95 : 307 - 314