ELECTRON TRAPPING AND DIELECTRIC-STRENGTH ENHANCEMENT IN RADIATION-DAMAGED SILICON DIOXIDE

被引：0
|
作者：
VROMEN, BH [1 ]
机构：
[1] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C293 / C293
页数：1
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