ELECTRON TRAPPING AND DIELECTRIC-STRENGTH ENHANCEMENT IN RADIATION-DAMAGED SILICON DIOXIDE

被引：0

作者：

VROMEN, BH ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C293 / C293

页数：1

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