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VERY HIGH MOBILITY HGTE FILMS GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：13
|
作者：
FELDMAN, RD [1 ]
ORON, M [1 ]
AUSTIN, RF [1 ]
OPILA, RL [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期
关键词：
D O I：
10.1063/1.340944
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2872 / 2874
页数：3
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