CHARACTERIZATION OF HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：65
|
作者：
DINGLE, R
WEISBUCH, C
STORMER, HL
MORKOC, H
CHO, AY
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 06期
关键词：
D O I：
10.1063/1.93159
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：507 / 510
页数：4
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