PRODUCTION OF SILICON SINGLE-CRYSTALS AND WAFERS

被引：0

作者：

ABE, Y

机构：

来源：

DENKI KAGAKU | 1986年 / 54卷 / 08期

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D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：662 / 666

页数：5

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[41] PHOTOELECTRONIC PROPERTIES OF ZN IMPURITY IN SILICON SINGLE-CRYSTALS
SKLENSKY, A
BUBE, RH
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (01): : 27 - &
[42] DEMONSTRATION OF OXYGEN IN SILICON SINGLE-CRYSTALS USING ESR
NEUBRAND, H
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 17 (02): : 459 - 470
[43] ASYMMETRY OF ISOLATED DISLOCATION MOBILITY IN SILICON SINGLE-CRYSTALS
NIKITENKO, VI
FARBER, BY
YAKIMOV, EB
CRYSTAL RESEARCH AND TECHNOLOGY, 1984, 19 (03) : 295 - 302
[44] POLARITY OF SINGLE-CRYSTALS OF ALPHA-SILICON CARBIDE
ILIN, MA
IONOV, VI
INORGANIC MATERIALS, 1976, 12 (08) : 1224 - 1225
[45] FACTORS AFFECTING THE VOLUME STRENGTH OF SILICON SINGLE-CRYSTALS
OSVENSKII, VB
TUROVSKII, BM
MEZHENNYI, MV
SOKOLOVA, EL
STOLYAROV, OG
INORGANIC MATERIALS, 1985, 21 (03) : 299 - 302
[46] KINETICS OF ANNEALING OF VACANCY COMPLEXES IN SILICON SINGLE-CRYSTALS
BURBELO, MRM
DAVIDOVSKII, BM
MAKSIMYUK, PA
FIZIKA TVERDOGO TELA, 1978, 20 (01): : 186 - 189
[47] BACKSCATTERING OF NEUTRONS FROM PERFECT SILICON SINGLE-CRYSTALS
HEIDEMANN, A
SCHOLZ, J
ZEITSCHRIFT FUR PHYSIK, 1973, 263 (04): : 291 - 298
[48] ELECTROLYTIC ETCHING OF SILICON-IRON SINGLE-CRYSTALS
BARANOVA, GK
NADGORNYI, EM
SCRIPTA METALLURGICA, 1975, 9 (08): : 845 - 850
[49] OHMIC PALLADIUM CONTACTS ON SILICON AND GERMANIUM SINGLE-CRYSTALS
PROTSENKO, AV
BELIKOVA, MN
SINITSYN, VN
POYARKOVA, IF
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1981, 24 (06) : 1542 - 1544
[50] DIFFUSION OF DEUTERIUM INTO SILICON SINGLE-CRYSTALS - AN INVESTIGATION WITH SIMS
HERION, J
BEYER, W
WAGNER, H
FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE, 1984, 319 (6-7): : 714 - 718

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