共 50 条
- [31] POINT-DEFECT RELAXATION IN SILICON SINGLE-CRYSTALS MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1989, 110 : L1 - L4
- [32] THE ORIGIN OF IRON INTERSTITIAL IN QUENCHED SILICON SINGLE-CRYSTALS PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1982, 70 (01): : K39 - K42
- [33] ELLIPSOMETRIC STUDIES OF SILICON-CARBIDE SINGLE-CRYSTALS FIZIKA TVERDOGO TELA, 1977, 19 (12): : 3653 - 3656
- [34] IMPREGNATION WITH HEAVY-IONS IN SILICON SINGLE-CRYSTALS FIZIKA TVERDOGO TELA, 1975, 17 (04): : 1080 - 1084
- [35] STANDARD ORIENTATION SPECIMENS BASED ON SILICON SINGLE-CRYSTALS MEASUREMENT TECHNIQUES USSR, 1984, 27 (03): : 266 - 268
- [36] MICROWAVE CONDUCTIVITY OF DISLOCATIONS IN DEFORMED SILICON SINGLE-CRYSTALS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 90 (02): : K209 - K213
- [38] GOLD-INDUCED DEFECTS IN SILICON SINGLE-CRYSTALS INDIAN JOURNAL OF TECHNOLOGY, 1973, 11 (10): : 474 - 477
- [40] ELECTROCHEMICAL BEHAVIOR OF SILICON SINGLE-CRYSTALS IN CHLOROALUMINATE MELT SOVIET ELECTROCHEMISTRY, 1978, 14 (11): : 1453 - 1458