TEM CHARACTERIZATION OF THE DEFECT STRUCTURE IN GAAS-LAYERS GROWN ON SI SUBSTRATES BY MBE

被引：0
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作者：
BRUCE, R
MANDEVILLE, P
SPRINGTHORPE, AJ
MINER, CJ
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来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1987年 / 87期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：111 / 116
页数：6
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