OPTICAL AND ELECTRICAL CHARACTERIZATION OF CHEMICAL DEFECTS IN GAAS-LAYERS GROWN BY MBE

被引:13
|
作者
KOSCHEL, WH
SMITH, RS
HIESINGER, P
机构
关键词
D O I
10.1149/1.2127631
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1336 / 1339
页数:4
相关论文
共 50 条
  • [1] OPTICAL AND ELECTRICAL CHARACTERIZATION OF IMPURITIES IN GAAS-LAYERS GROWN BY MBE
    HIESINGER, P
    KOSCHEL, WH
    SMITH, RS
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 713 - 713
  • [2] THE GROTESQUES OF OVAL DEFECTS ON THE MBE-GROWN GAAS-LAYERS
    CHOU, YC
    LEE, CT
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (05): : 774 - 775
  • [3] ON THE SURFACE-DEFECTS OF MBE-GROWN GAAS-LAYERS
    WANG, YH
    LIU, WC
    LIAO, SA
    CHENG, KY
    CHANG, CY
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 628 - 629
  • [4] REDUCTION OF SURFACE-DEFECTS IN GAAS-LAYERS GROWN BY MBE
    KAWADA, H
    SHIRAYONE, S
    TAKAHASHI, K
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) : 550 - 556
  • [5] ELECTRICAL-PROPERTIES OF INDIUM DOPED GAAS-LAYERS GROWN BY MBE
    MISSOUS, M
    SINGER, KE
    NICHOLAS, DJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 314 - 318
  • [6] TEM CHARACTERIZATION OF THE DEFECT STRUCTURE IN GAAS-LAYERS GROWN ON SI SUBSTRATES BY MBE
    BRUCE, R
    MANDEVILLE, P
    SPRINGTHORPE, AJ
    MINER, CJ
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 111 - 116
  • [7] RESIDUAL IMPURITY AND DEFECT LEVELS IN GAAS-LAYERS GROWN BY MBE
    KOSCHEL, WH
    HIESINGER, P
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 205 - 205
  • [8] MBE-GROWN GAAS-LAYERS BY CONTROLLING ARSENIC PRESSURE
    WANG, YH
    LIU, WC
    CHANG, CY
    LIAO, SA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : C404 - C404
  • [9] ELECTRICAL CHARACTERIZATION OF DEFECTS INTRODUCED IN EPITAXIALLY GROWN GAAS-LAYERS DURING ELECTRON-BEAM METALLIZATION
    NEL, M
    AURET, FD
    LEITCH, AWR
    [J]. SOUTH AFRICAN JOURNAL OF SCIENCE, 1988, 84 (08) : 710 - 711
  • [10] RELATIONSHIP OF PROPERTIES OF MBE GROWN GAAS-LAYERS WITH GROWTH-CONDITIONS
    DUNG, PT
    LAZNICKA, M
    PAJASOVA, L
    [J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1986, 36 (06) : 759 - +