ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE-SILICON THIN-FILMS

被引：0

作者：

KAMINS, TI ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C100 / C100

页数：1

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[31] ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SILICON
SETO, JYW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C115 - C115
[32] DC ELECTRICAL-PROPERTIES OF EVAPORATED THIN-FILMS OF CDTE
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 19 - 19
[38] MORPHOLOGY AND ELECTRICAL-PROPERTIES OF IN DOPED CDS THIN-FILMS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1956 - 1959
[39] ELECTRICAL-PROPERTIES OF FLASH EVAPORATED THIN-FILMS OF INTE
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[40] ELECTRICAL-PROPERTIES OF SELECTIVELY DEPOSITED TUNGSTEN THIN-FILMS
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