ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SILICON

被引:0
|
作者
SETO, JYW [1 ]
机构
[1] INTERSIL,SUNNYVALLE,CA 94086
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C115 / C115
页数:1
相关论文
共 50 条
  • [1] ELECTRICAL-PROPERTIES OF LIGHTLY DOPED POLYCRYSTALLINE SILICON
    LEE, JYM
    CHENG, IC
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 490 - 495
  • [2] ELECTRICAL-PROPERTIES OF LIGHTLY DOPED POLYCRYSTALLINE SILICON
    LEE, JYM
    CHENG, IC
    GATES, JL
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C97 - C97
  • [3] EFFECT OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SILICON
    MANDURAH, MM
    SARASWAT, KC
    HELMS, CR
    KAMINS, TI
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C386 - C386
  • [4] ON THE ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE DIAMOND FILMS ON SILICON
    DECESARE, G
    SALVATORI, S
    VINCENZONI, R
    ASCARELLI, P
    CAPPELLI, E
    PINZARI, F
    GALLUZZI, F
    [J]. DIAMOND AND RELATED MATERIALS, 1995, 4 (5-6) : 628 - 631
  • [5] ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SILICON UNDER OPTICAL ILLUMINATION
    BHATT, DP
    JOSHI, DP
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 2338 - 2345
  • [6] ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SILICON IN THE DARK AND UNDER ILLUMINATION
    TYAGI, BP
    SEN, K
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 90 (02): : 709 - 713
  • [7] ELECTRICAL-PROPERTIES OF CRYSTALLIZED SEMIINSULATING POLYCRYSTALLINE SILICON FILMS
    CHO, WJ
    TAKEUCHI, Y
    KUWANO, H
    [J]. ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1994, 77 (01): : 77 - 86
  • [8] ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE-SILICON THIN-FILMS
    KAMINS, TI
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C100 - C100
  • [9] ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SILICON LAYERS UNDER SOLAR ILLUMINATION
    DIMITRIADIS, CA
    ALEXANDROU, A
    ECONOMOU, NA
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) : 3651 - 3655
  • [10] INFLUENCE OF EXTENDED DEFECTS AND IMPURITIES ON THE ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SILICON
    PIZZINI, S
    BEGHI, M
    NARDUCCI, D
    FABRI, G
    DEMARTIN, F
    MORAZZONI, F
    OTTAVIANI, GP
    SANDRINELLI, A
    TORCHIO, S
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C112 - C112