ON THE ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE DIAMOND FILMS ON SILICON

被引：24
|
作者：
DECESARE, G
SALVATORI, S
VINCENZONI, R
ASCARELLI, P
CAPPELLI, E
PINZARI, F
GALLUZZI, F
机构：
[1] CNR,IMAI,I-00016 ROME,ITALY
[2] UNIV MESSINA,FAC INGN,MESSINA,ITALY
来源：
DIAMOND AND RELATED MATERIALS | 1995年 / 4卷 / 5-6期
关键词：
POLYCRYSTALLINE DIAMOND FILMS; HEATED FILAMENT CVD; ELECTRICAL PROPERTIES; SCHOTTKY DIODE;
D O I：
10.1016/0925-9635(94)05294-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical behaviour of metal/diamond/silicon structures was investigated by current-voltage measurements as a function of temperature in the range 20-270 degrees C. The results were related to the morphology and composition of the diamond film by a nonlinear electrical model, taking into account both a temperature-independent conductance through highly defective regions and a temperature-dependent field-activated conductance through bulk diamond grains.
引用
收藏
页码：628 / 631
页数：4
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