首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
BASE PUSHOUT EFFECT ON COLLECTOR SIGNAL DELAY AND EARLY VOLTAGE FOR HETEROJUNCTION BIPOLAR-TRANSISTORS
被引:1
|
作者
:
YUAN, JS
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering University of Central Florida, Orlando
YUAN, JS
机构
:
[1]
Department of Electrical Engineering University of Central Florida, Orlando
来源
:
SOLID-STATE ELECTRONICS
|
1993年
/ 36卷
/ 04期
关键词
:
D O I
:
10.1016/0038-1101(93)90282-U
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
[No abstract available]
引用
收藏
页码:657 / 660
页数:4
相关论文
共 50 条
[1]
THE BASE COLLECTOR HETEROJUNCTION EFFECT IN SIGE BASE BIPOLAR-TRANSISTORS
UGAJIN, M
论文数:
0
引用数:
0
h-index:
0
机构:
NTT LSI Laboratories, Nippon Telegraph and Telephone Corp., Atsugi-shi, Kanagawa Pref.
UGAJIN, M
AMEMIYA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NTT LSI Laboratories, Nippon Telegraph and Telephone Corp., Atsugi-shi, Kanagawa Pref.
AMEMIYA, Y
[J].
SOLID-STATE ELECTRONICS,
1991,
34
(06)
: 593
-
598
[2]
COLLECTOR-EMITTER OFFSET VOLTAGE IN HETEROJUNCTION BIPOLAR-TRANSISTORS
MAZHARI, B
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
MAZHARI, B
GAO, GB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
GAO, GB
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
MORKOC, H
[J].
SOLID-STATE ELECTRONICS,
1991,
34
(03)
: 315
-
321
[3]
EARLY VOLTAGE IN HETEROJUNCTION BIPOLAR-TRANSISTORS - QUANTUM TUNNELING AND BASE RECOMBINATION EFFECTS
KROWNE, CM
论文数:
0
引用数:
0
h-index:
0
机构:
LOUISIANA STATE UNIV,BATON ROUGE,LA 70803
LOUISIANA STATE UNIV,BATON ROUGE,LA 70803
KROWNE, CM
IKOSSIANASTASIOU, K
论文数:
0
引用数:
0
h-index:
0
机构:
LOUISIANA STATE UNIV,BATON ROUGE,LA 70803
LOUISIANA STATE UNIV,BATON ROUGE,LA 70803
IKOSSIANASTASIOU, K
KOUGIANOS, E
论文数:
0
引用数:
0
h-index:
0
机构:
LOUISIANA STATE UNIV,BATON ROUGE,LA 70803
LOUISIANA STATE UNIV,BATON ROUGE,LA 70803
KOUGIANOS, E
[J].
SOLID-STATE ELECTRONICS,
1995,
38
(12)
: 1979
-
1991
[4]
EARLY VOLTAGE IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
JAHAN, MM
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical and Systems Engineering, The University of Connecticut, Storrs
JAHAN, MM
ANWAR, AFM
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical and Systems Engineering, The University of Connecticut, Storrs
ANWAR, AFM
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1995,
42
(11)
: 2028
-
2029
[5]
BASE AND COLLECTOR LEAKAGE CURRENTS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
LIOU, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
WRIGHT LAB,SOLID STATE ELECTR DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433
LIOU, JJ
HUANG, CI
论文数:
0
引用数:
0
h-index:
0
机构:
WRIGHT LAB,SOLID STATE ELECTR DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433
HUANG, CI
BAYRAKTAROGLU, B
论文数:
0
引用数:
0
h-index:
0
机构:
WRIGHT LAB,SOLID STATE ELECTR DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433
BAYRAKTAROGLU, B
WILLIAMSON, DC
论文数:
0
引用数:
0
h-index:
0
机构:
WRIGHT LAB,SOLID STATE ELECTR DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433
WILLIAMSON, DC
PARAB, KB
论文数:
0
引用数:
0
h-index:
0
机构:
WRIGHT LAB,SOLID STATE ELECTR DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433
PARAB, KB
[J].
JOURNAL OF APPLIED PHYSICS,
1994,
76
(05)
: 3187
-
3193
[6]
CHANGES IN COLLECTOR AND BASE CURRENTS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
IIZUKA, N
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba R and D Center, Saiwai-ku, Kawasaki, 210
IIZUKA, N
SUGIYAMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba R and D Center, Saiwai-ku, Kawasaki, 210
SUGIYAMA, T
OBARA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Toshiba R and D Center, Saiwai-ku, Kawasaki, 210
OBARA, M
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1994,
33
(6A):
: 3377
-
3382
[7]
COLLECTOR EMITTER OFFSET VOLTAGE IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
HAYES, JR
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
HAYES, JR
GOSSARD, AC
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
GOSSARD, AC
WIEGMANN, W
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
WIEGMANN, W
[J].
ELECTRONICS LETTERS,
1984,
20
(19)
: 766
-
767
[8]
DYNAMIC EARLY EFFECT IN HETEROJUNCTION BIPOLAR-TRANSISTORS
GRINBERG, AA
论文数:
0
引用数:
0
h-index:
0
机构:
AT & T Bell Laboratories, Murray Hill
GRINBERG, AA
LURYI, S
论文数:
0
引用数:
0
h-index:
0
机构:
AT & T Bell Laboratories, Murray Hill
LURYI, S
[J].
IEEE ELECTRON DEVICE LETTERS,
1993,
14
(06)
: 292
-
294
[9]
KINK EFFECT ON THE BASE CURRENT OF HETEROJUNCTION BIPOLAR-TRANSISTORS
LIOU, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Solid State Electronics Directorate Wright Laboratory Wright-Patterson Air Force Base OH
LIOU, JJ
LIOU, LL
论文数:
0
引用数:
0
h-index:
0
机构:
Solid State Electronics Directorate Wright Laboratory Wright-Patterson Air Force Base OH
LIOU, LL
HUANG, CI
论文数:
0
引用数:
0
h-index:
0
机构:
Solid State Electronics Directorate Wright Laboratory Wright-Patterson Air Force Base OH
HUANG, CI
[J].
SOLID-STATE ELECTRONICS,
1993,
36
(08)
: 1222
-
1224
[10]
COLLECTOR-EMITTER OFFSET VOLTAGE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
CHAND, N
论文数:
0
引用数:
0
h-index:
0
CHAND, N
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
FISCHER, R
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
MORKOC, H
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(03)
: 313
-
315
←
1
2
3
4
5
→