共 50 条
- [1] Thermally stimulated dislocation generation in silicon crystals grown by the Float-Zone methodJOURNAL OF CRYSTAL GROWTH, 2020, 552Rost, H-JBuchovska, IDadzis, K.Juda, U.Renner, M.Menzel, R.
- [2] DIFFERENCE IN THE MECHANICAL STRENGTHS OF DISLOCATION-FREE CRYSTALS OF CZOCHRALSKI SILICON AND FLOAT-ZONE SILICONJAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L685 - L688SUMINO, KYONENAGA, I
- [3] EVIDENCE OF VACANCY CLUSTERS IN DISLOCATION-FREE FLOAT-ZONE SILICONTRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1965, 233 (04): : 809 - &PLASKETT, TS
- [4] Physical model of paths of microdefects nucleation in dislocation-free single crystals float-zone siliconCRYSTAL RESEARCH AND TECHNOLOGY, 2002, 37 (09) : 983 - 1010Talanin, VITalanin, IELevinson, DI
- [6] Physics of the formation of microdefects in dislocation-free monocrystals of float-zone siliconSEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (02) : 104 - 113Talanin, VITalanin, IELevinson, DI
- [7] The influence of nitrogen on dislocation locking in float-zone siliconGETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 2005, 108-109 : 139 - 144Murphy, JDGiannattasio, AAlpass, CRSenkader, SFalster, RJWilshaw, PR
- [8] DEFECT CLUSTERS (SWIRL DEFECTS) IN FLOAT-ZONE SILICONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C387 - C387FOLL, HGOSELE, UKOLBESEN, BO
- [10] ANNEALING BEHAVIOR AND ETCHING PHENOMENA OF MICRODEFECTS IN DISLOCATION-FREE FLOAT-ZONE SILICONPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (02): : 577 - &DARAGONA, FS