DISLOCATION BEHAVIOR AND MECHANICAL STRENGTHS OF FLOAT-ZONE SILICON-CRYSTALS AND CZOCHRALSKI SILICON-CRYSTALS

被引：0

作者：

SUMINO, K ^{[1
]}

机构：

[1] TOHOKU UNIV,IRON STEEL & OTHER MET RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C93 / C93

页数：1

共 50 条

[1] DIFFERENCE IN THE MECHANICAL STRENGTHS OF DISLOCATION-FREE CRYSTALS OF CZOCHRALSKI SILICON AND FLOAT-ZONE SILICON
SUMINO, K
YONENAGA, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L685 - L688
[2] MECHANICAL STRENGTH OF OXYGEN-DOPED FLOAT-ZONE SILICON-CRYSTALS
SUMINO, K
YONENAGA, I
YUSA, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) : L763 - L766
[3] 90-DEGREES GROWTH TWINS IN FLOAT-ZONE SILICON-CRYSTALS
BAGAI, RK
BORLE, WN
[J]. INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1980, 18 (12) : 1005 - 1008
[4] CREATION AND ELIMINATION OF DISLOCATIONS IN FLOAT ZONE SILICON-CRYSTALS
BAGAI, RK
BORLE, WN
BAL, M
NANGIA, OP
[J]. INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1980, 18 (09) : 642 - 648
[5] GROWTH OF LARGE DIAMETER FLOAT ZONE SILICON-CRYSTALS
BORLE, WN
BAL, M
SHARDA, GD
SETH, GL
NANGIA, OP
BAGAI, RK
[J]. INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1975, 13 (06) : 406 - 407
[6] EFFECTS OF NITROGEN ON DISLOCATION BEHAVIOR AND MECHANICAL STRENGTH IN SILICON-CRYSTALS
SUMINO, K
YONENAGA, I
IMAI, M
ABE, T
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5016 - 5020
[7] OXYGEN STRIATIONS IN CZOCHRALSKI SILICON-CRYSTALS
DOMENICI, M
MOLINARI, E
[J]. MATERIALS CHEMISTRY, 1979, 4 (03): : 291 - 300
[8] CONTROL OF CARBON IN CZOCHRALSKI SILICON-CRYSTALS
SERIES, RW
BARRACLOUGH, KG
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) : 219 - 221
[9] DISLOCATION-FREE CZOCHRALSKI GROWTH OF (110) SILICON-CRYSTALS
DYER, LD
[J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (04) : 533 - 540
[10] MAXIMUM STABLE ZONE LENGTH IN FLOAT-ZONE GROWTH OF SMALL-DIAMETER SAPPHIRE AND SILICON-CRYSTALS
KIM, KM
DREEBEN, AB
SCHUJKO, A
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4472 - 4474

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