共 50 条
- [1] Physics of the formation of microdefects in dislocation-free monocrystals of float-zone silicon[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (02) : 104 - 113Talanin, VITalanin, IELevinson, DI
- [2] Physical model of paths of microdefects nucleation in dislocation-free single crystals float-zone silicon[J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2002, 37 (09) : 983 - 1010Talanin, VITalanin, IELevinson, DI
- [3] EVIDENCE OF VACANCY CLUSTERS IN DISLOCATION-FREE FLOAT-ZONE SILICON[J]. TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1965, 233 (04): : 809 - &PLASKETT, TS
- [4] DIFFERENCE IN THE MECHANICAL STRENGTHS OF DISLOCATION-FREE CRYSTALS OF CZOCHRALSKI SILICON AND FLOAT-ZONE SILICON[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L685 - L688SUMINO, KYONENAGA, I
- [5] EFFECT OF DOPING ON THE BEHAVIOR OF MICRODEFECTS IN DISLOCATION-FREE SILICON[J]. INORGANIC MATERIALS, 1987, 23 (11) : 1559 - 1562POSTOLOV, VGBUBLIK, VTKOVEV, EKLITVINOV, YM
- [6] MICRODEFECTS IN DISLOCATION-FREE SILICON CRYSTALS[J]. PHILIPS RESEARCH REPORTS, 1973, (01): : 1 - 102DEKOCK, AJR
- [7] FORMATION OF THERMAL DONORS DURING ANNEALING OF RADIATION DEFECTS IN FLOAT-ZONE DISLOCATION-FREE N-SI[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 118 (01): : 65 - 69KOLKOVSKII, IILUGAKOV, PFLUKYANITSA, VVSHUSHA, VV
- [8] DEFECT STRUCTURE IN DISLOCATION - FREE SILICON CRYSTALS GROWN BY FLOAT-ZONE METHOD[J]. JOM-JOURNAL OF METALS, 1964, 16 (01): : 105 - &PLASKETT, TS
- [9] The influence of nitrogen on dislocation locking in float-zone silicon[J]. GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 2005, 108-109 : 139 - 144Murphy, JDGiannattasio, AAlpass, CRSenkader, SFalster, RJWilshaw, PR
- [10] Microdefects in Dislocation-free Silicon Single Crystals.[J]. Tsvetnye Metally, 1984, (03): : 64 - 67Eidenzon, A.M.Puzanov, N.I.Kalyuzhnaya, S.I.