DEFECT STRUCTURE IN DISLOCATION - FREE SILICON CRYSTALS GROWN BY FLOAT-ZONE METHOD

被引：0
|
作者：
PLASKETT, TS
机构：
来源：
JOM-JOURNAL OF METALS | 1964年 / 16卷 / 01期
关键词：
D O I：
暂无
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
引用
收藏
页码：105 / &
相关论文
共 50 条
  • [21] MECHANICAL STRENGTH OF OXYGEN-DOPED FLOAT-ZONE SILICON-CRYSTALS
    SUMINO, K
    YONENAGA, I
    YUSA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) : L763 - L766
  • [22] Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
    Alpass, C. R.
    Murphy, J. D.
    Giannattasio, A.
    Senkader, S.
    Falster, R. J.
    Wilshaw, P. R.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (07): : 2256 - 2260
  • [23] Float-zone growth of silicon crystals using large-area seeding
    Menzel, Robert
    Rost, Hans-Joachim
    Kiesling, Frank M.
    Sylla, Lamine
    JOURNAL OF CRYSTAL GROWTH, 2019, 515 : 32 - 36
  • [24] Thermal activation and deactivation of grown-in defects limiting the lifetime of float-zone silicon
    Grant, Nicholas E.
    Markevich, Vladimir P.
    Mullins, Jack
    Peaker, Anthony R.
    Rougieux, Fiacre
    Macdonald, Daniel
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2016, 10 (06): : 443 - 447
  • [25] PREPARATION OF OXIDE CRYSTALS BY A PLASMA FLOAT-ZONE TECHNIQUE
    CLASS, W
    NESOR, HR
    MURRAY, GT
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, S : 75 - &
  • [26] AUTOMATIC DIAMETER CONTROL IN FLOAT-ZONE REFINING OF SILICON
    ROWTON, EE
    IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS AND CONTROL INSTRUMENTATION, 1966, IE13 (01): : 66 - +
  • [27] Study of point defect clusters in high purity single crystals of silicon grown by Czochralski and float-zone methods by diffuse X-ray scattering technique
    Natl Physical Lab, New Delhi, India
    J Cryst Growth, 4 (377-382):
  • [28] The lattice spacing variability of intrinsic float-zone silicon
    Kessler E.G.
    Szabo C.I.
    Cline J.P.
    Henins A.
    Hudson L.T.
    Mendenhall M.H.
    Vaudin M.D.
    1600, National Institute of Standards and Technology (122):
  • [29] Float-zone pedestal growth of thin silicon filaments
    Ciszek, TF
    Wang, TH
    HIGH PURITY SILICON V, 1998, 98 (13): : 85 - 89
  • [30] Vacancy-nitrogen complexes in float-zone silicon
    Quast, F
    Pichler, P
    Ryssel, H
    Falster, R
    HIGH PURITY SILICON VI, 2000, 4218 : 156 - 163
12345