TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT-DENSITY OF AN INJECTION HETEROLASER

An analytic dependence of the density of the injection current on the temperature of a semiconductor laser is determined near the lasing threshold. The ratio of the electron quasi-Fermi level F(c) to the temperature T at the inversion threshold, and at the lasing threshold is shown to be constant. This constant is governed solely by the properties of the semiconductor.