共 50 条
- [2] ON THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF PBSE/PBSNSE DH-LASERS [J]. KVANTOVAYA ELEKTRONIKA, 1993, 20 (04): : 345 - 348
- [3] EPITAXIAL ALGAASSB-GASB(ALGASB) HETEROSTRUCTURES FOR INJECTION-LASERS [J]. KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (11): : 1311 - 1316
- [8] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN (GALN) (ASP) DH LASERS AT 1.3 AND 1.5 MU-M WAVELENGTH [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (02): : 37 - 43