ON THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF PBSE/PBSNSE DH-LASERS

被引：0

作者：

BYCHKOVA, LP

DAVARASHVILI, OI

SHOTOV, AP

机构：

来源：

KVANTOVAYA ELEKTRONIKA | 1993年 / 20卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of gain in narrow gap semiconductors and that of the threshold current in PbSe/PbSnSe DH-lasers are investigated. The following currents are taken into account: the tunneling current, the recombination current at the heterojunction, and the overbarrier current. A comparison of the calculated and experimental data is made. The conditions for PbSe/PbSnSe DH-laser generation at room temperature have been determined.

引用

页码：345 / 348

页数：4

共 50 条

[1] THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS
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[4] TEMPERATURE-DEPENDENCE OF THRESHOLD AND ELECTRICAL CHARACTERISTICS OF INGAASP-INP DH LASERS
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[7] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN (GALN) (ASP) DH LASERS AT 1.3 AND 1.5 MU-M WAVELENGTH
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[8] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS/ALGAAS QUANTUM WELL LASERS
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[9] TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT FOR ALGAAS LASERS GROWN BY LOW-TEMPERATURE LPE
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[10] AN EFFECT OF THE ACTIVE REGION THICKNESS ON THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT IN HOMOSTRUCTURE LASERS
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[J]. KVANTOVAYA ELEKTRONIKA, 1980, 7 (07): : 1461 - 1465

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