A BALANCED KA-BAND GAAS-FET MMIC FREQUENCY DOUBLER

被引:7
|
作者
ABDOTUKO, M
BERTENBURG, R
WOLFF, I
机构
[1] University of Duisburg, 47048, Duisburg, Germany
来源
关键词
Band structure - Computational methods - Dielectric waveguides - Electric network analysis - Field effect transistors - Finite difference method - Integrated circuit layout - Integrated circuit testing - Monolithic integrated circuits - Semiconducting gallium arsenide - Semiconductor device models - Semiconductor device structures;
D O I
10.1109/75.298245
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A simplified and miniaturized state-of-the-art balanced GaAs FET MMIC frequency doubler operating at 36 GHz has been designed and realized in coplanar waveguide technology. The passive part of the circuit is designed using an effective, in-house developed quasi-static finite-difference method for the analysis of coplanar structures [1], [2] while the active device is characterized by using the Curtice-Ettenberg model [3]. The model makes use of the measured electrical values of the transistor and interpretes them through approximate empirical formulas. The results obtained demonstrate that by using simple models, which require very little computation time, it is possible to design an efficient frequency doubler in the Ka-band with a maximum conversion gain of 3 to 6 dB, without the need of using complicated transistor models or circuitry.
引用
收藏
页码:217 / 219
页数:3
相关论文
共 50 条
  • [41] BROAD-BAND GAAS-FET AMPLIFIER DESIGN
    IDA, M
    SUGETA, T
    SHIMADA, K
    REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1975, 23 (11-1): : 1193 - 1196
  • [42] COPLANAR KA-BAND SIGE-MMIC AMPLIFIER
    STROHM, KM
    LUY, JF
    SCHAFFLER, F
    JORKE, H
    KIBBEL, H
    RHEINFELDER, C
    DOERNER, R
    GERDES, J
    SCHMUCKLE, FJ
    HEINRICH, W
    ELECTRONICS LETTERS, 1995, 31 (16) : 1353 - 1354
  • [43] MESFET process yields MMIC Ka-band PAs
    Bahl, I
    MICROWAVES & RF, 2005, 44 (05) : 96 - +
  • [44] A Ka-band 22 dBm GaN amplifier MMIC
    Wang Dongfang
    Chen Xiaojuan
    Yuan Tingting
    Wei Ke
    Liu Xinyu
    JOURNAL OF SEMICONDUCTORS, 2011, 32 (08)
  • [45] GaN MMIC for Ka-Band with 18W
    Takagi, K.
    Ng, C. Y.
    Sakurai, H.
    Matsushita, K.
    2015 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2015,
  • [46] A Ka-band 22 dBm GaN amplifier MMIC
    王东方
    陈晓娟
    袁婷婷
    魏珂
    刘新宇
    半导体学报, 2011, 32 (08) : 128 - 131
  • [47] Ka-band MMIC voltage-controlled oscillators
    Do-Ky, H
    Stubbs, M
    Laneve, T
    Glaser, C
    Drolet, D
    1997 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS I-III, 1997, : 545 - 548
  • [48] A Ka-Band Reconfigurable Output Power PA MMIC
    Campbell, Charles F.
    2024 19TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC 2024, 2024, : 154 - 157
  • [49] The MMIC VCO Design for Wireless Systems at Ka-Band
    Lee, Han-Young
    Kim, Wan-Sik
    JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, 2010, 5 (01) : 151 - 155
  • [50] A Ka-band MMIC oscillator stabilized with a micromachined cavity
    Kwon, Y
    Cheon, C
    Kim, N
    Kim, C
    Song, I
    Song, C
    IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1999, 9 (09): : 360 - 362