MODELING OF MOS-TRANSISTORS WITH NONRECTANGULAR GATE GEOMETRIES - COMMENT

被引：2
|
作者：
DEMEY, G
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 07期
关键词：
D O I：
10.1109/T-ED.1983.21224
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：862 / 863
页数：2
相关论文
共 50 条
  • [41] MODELING INTENSELY NONEQUILIBRIUM ELECTRON PHENOMENA IN SUBMICRON SILICON MOS-TRANSISTORS
    BANNOV, NA
    KAZMIN, OI
    SOVIET MICROELECTRONICS, 1989, 18 (02): : 60 - 71
  • [42] Combined method for two-dimensional modeling of MOS-transistors parameters
    Cherkaev, Aleksey S.
    Makarov, Evgeny A.
    Vorontsov, Yaroslav I.
    Kalinin, Sergey V.
    EDM 2007: 8TH INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, 2007, : 100 - +
  • [43] DIFFERENTIAL STAGE USING MOS-TRANSISTORS
    DAVYDOV, VB
    TELECOMMUNICATIONS AND RADIO ENGINEERING, 1976, 30 (09) : 37 - 40
  • [44] THERMAL RESISTANCE OF INTEGRATED MOS-TRANSISTORS
    KIRSCHNER, N
    MICROELECTRONICS AND RELIABILITY, 1975, 14 (01): : 37 - 39
  • [45] SHORT CHANNEL EFFECTS IN MOS-TRANSISTORS
    BJORKQVIST, K
    ARNBORG, T
    PHYSICA SCRIPTA, 1981, 24 (02): : 418 - 421
  • [46] DRAIN VOLTAGE LIMITATIONS OF MOS-TRANSISTORS
    BATEMAN, IM
    ARMSTRONG, GA
    MAGOWAN, JA
    SOLID-STATE ELECTRONICS, 1974, 17 (06) : 539 - 550
  • [47] ANALYSIS OF THE KINK EFFECT IN MOS-TRANSISTORS
    HAFEZ, IM
    GHIBAUDO, G
    BALESTRA, F
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) : 818 - 821
  • [48] 1/F NOISE IN N-CHANNEL SILICON-GATE MOS-TRANSISTORS
    MIKOSHIBA, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 965 - 970
  • [49] ROOM-TEMPERATURE INSTABILITIES OF P-CHANNEL SILICON GATE MOS-TRANSISTORS
    NAKAYAMA, H
    OSADA, Y
    SHINDO, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : 1302 - 1306
  • [50] BIMOS TRANSISTORS - MERGED BIPOLAR SIDEWALL MOS-TRANSISTORS
    O, KK
    REIF, R
    LEE, HS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2606 - 2606
12345